To specifically address the needs of these demanding markets, Microsemi has developed proprietary 500V and higher wafer fabrication processes for making RF power MOSFETs. This doubles a transistor’s safe operating area (SOA), dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances Class AB operation reliability.

KEY FEATURES

• Up to 1000 Watts Pulsed Output Power
• Up to 450W, CW Output Power
• Lower Cost Flangeless Package
• Up to 150 MHz Operation
• 165 V Operation / 500 V BV(DSS)
• Class AB Capable
• Maximized Safe Operating Area (SOA)
• High Load Mismatch Tolerance
• Superior Thermal Stability

The ARF476FL flangeless package is optimized for high power and high voltage by implementing an extended substrate that adds 3mm of creep distance and a lead frame that increases lead spacing. The dual MOSFET is internally configured for push-pull operation and is well suited for 165V applications.

Using a patented process and finer geometry, the ARF476FL can deliver much higher peak power and RF gain than standard MOSFETs. It is capable of delivering 900W peak or 450W CW output at 150 MHz.

The 165VDC operating voltage simplifies output impedance matching circuitry and facilitates integrated assemblies combining a DC power supply and RF power amplifier, significantly reducing their size and overall system cost. The coplanar lead arrangement facilitates circuit layout and provides over 2500 volts isolation between any terminal and the mounting surface.

The ARF476FL flangeless package lowers thermal resistance and cost compared to ceramic packages with a copper tungsten flange. Microsemi’s flangeless package design uses an air cavity and closely matched CTEs that maximize system reliability by alleviating stress during power cycling. Typical applications have been demonstrated beyond one million cycles with a power density of 700 Watts per square inch.

Datasheet: Model ARF476FL: RF Power MOSFET

Source: Microsemi Corporation